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P80NF55 Power MOSFETs
High-efficiency MOSFETs for advanced DCDC converters
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 80A
- Drain-Source Resistance (Rds On): 8Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 155 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 300W
Top Features:
- 100% avalanche tested
- Automotive applications and AEC-Q101 qualified
- Low input capacitance and gate charge
- Low gate input resistance
P80NF55 power MOSFETs have been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as the primary switch in advanced high-efficiency isolated DCDC converters for telecom and computer applications, and applications with low gate charge driving requirements.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.