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MJE350 Transistor
A three layer NPN or PNP device with high DC current gain and low collector-emitter saturation voltage.
- Transistor Polarity: PNP
- Collector-Emitter Voltage (VCEO): 300V
- Collector-Base Voltage (VCBO): 300V
- Emitter-Base Voltage (VEBO): 3V
- Continuous Collector Current (Ic): 0.5A
- Power Dissipation (Pd): 20.8W
- Operating Temperature Range: -65°C to 150°C
- DC Current Gain (hFE): 30-240
Features:
- High DC current gain
- Low collector-emitter saturation voltage
- High current-gain bandwidth product
- Annular construction for low leakage
MJE350 is a three-layer NPN or PNP device where the collector current IC varies with the base current IB, providing an amplified change in the collector current for a given collector-emitter voltage VCE.
Related Documents: MJE350 Transistor Datasheet
*Images are for illustration only; actual product may vary.