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MJE15032
A three-layer NPN device with high DC current gain and simple drive requirements.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 250VDC
- Collector-Base Voltage (VCBO): 250VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (Ic): 8ADC
- Continuous Base Current (Ib): 2ADC
- Power Dissipation (Pd): 50W
- Operating Temperature Range: -65 - 150°C
- DC Current Gain (hFE): 70
Features:
- High DC current gain
- TO-220 compact package
- Epoxy meets UL 94 V-0 @ 0.125 in
- Simple drive requirements
MJE15032 is a three-layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE.
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Images are for illustration only; actual product may vary.