×
MJ15003 Three Layer NPN Transistor
A versatile NPN transistor with high DC current gain and simple drive requirements.
- Transistor Polarity: NPN
- Collector-Emitter Voltage (VCEO): 140VDC
- Collector-Base Voltage (VCBO): 140VDC
- Emitter-Base Voltage (VEBO): 5VDC
- Continuous Collector Current (IC): 20ADC
- Continuous Base Current (IB): 5ADC
- Continuous Emitter Current (IE): 25ADC
- Power Dissipation (Pd): 250W
- Operating Temperature Range: -65°C to 200°C
- DC Current Gain (hFE): 150
Features:
- High safe operating area
- For low distortion complementary designs
- High DC current gain
- Simple drive requirements
MJ15003 is a three-layer NPN device with the collector current IC dependent on the base current IB. A change in the base current results in an amplified change in the collector current for a given collector-emitter voltage VCE.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.