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Insulated Gate Bipolar Transistors (IGBTs)
Higher usable current densities and simpler gate-drive requirements for high-voltage applications.
- Collector-to-Emitter Breakdown Voltage: 500V
- Emitter-to-Collector Breakdown Voltage: 20V
- Temperature Coeff. of Breakdown Voltage: 0.46V/°C
- Gate Threshold Voltage min: 3.0V
- Gate Threshold Voltage max: 5.5V
- Temperature Coeff. of Threshold Voltage: -11mV/°C
- Forward Transconductance min: 2.3S
- Forward Transconductance typ: 8.1S
- Gate-to-Emitter Leakage Current max: +100nA
- Package Includes: 1 X IRGB430U MOSFET - 500V 15A N- Channel Power MOSFET TO-220 Package
Top Features:
- Switching-loss rating includes all "tail" losses
- Optimized for high operating frequency (over 5kHz)
- See Fig. 1 for Current vs. Frequency curve
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier offer higher usable current densities compared to bipolar transistors. They also have simpler gate-drive requirements similar to power MOSFETs, providing substantial benefits for high-voltage, high-current applications.
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Images are for illustration only; actual product may vary.