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IRG4BC30UD Insulated Gate Bipolar Transistor
An ultrafast IGBT with Generation 4 design and optimized for specific applications.
- VCES: 600V
- IC @ TC = 25°C: 13A
- IC @ TC = 100°C: 6.5A
- ICM Pulsed Collector Current: 52A
- ILM Clamped Inductive Load Current: 52A
- IF @ TC = 100°C Diode Continuous Forward Current: 7A
- IFM Diode Maximum Forward Current: 52A
- VGE Gate-to-Emitter Voltage: ±20V
- PD @ TC = 25°C Maximum Power Dissipation: 60W
- PD @ TC = 100°C: 24W
- TJ Operating Junction and: -55 to +150°C
- Related Document: IRG4BC30UD IGBT Data Sheet
Features:
- UltraFast: Optimized for high operating frequencies 8-40 kHz
- Generation 4 IGBT design for higher efficiency
- Co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery diodes
- Industry standard TO-220AB package
The IRG4BC30UD is an Insulated Gate Bipolar Transistor designed as a "drop-in" replacement for Generation 3 IR IGBTs. It offers the highest efficiencies available and is optimized for specific application conditions. The HEXFRED diodes are optimized for performance with IGBTs, and the minimized recovery characteristics require less or no snubbing.
Soldering Temperature, for 10 sec: 300 (0.063 in. (1.6mm) from case). Mounting Torque, 6-32 or M3 Screw: 10 lbf•in (1.1 N•m).
* Images are for illustration only; actual product may vary.