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IRFPG50 Power MOSFET
The perfect combination of fast switching, rugged design, low on-resistance, and cost-effectiveness.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 6.1A
- Drain-Source Resistance (Rds On): 2 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 190 nC
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 190W
Top Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
The TO-247AC package is ideal for commercial-industrial applications due to its isolated mounting hole, allowing for greater creepage distance between pins to comply with safety specifications. It's an upgrade from the TO-218 package.
Related Documents
IRFPG50 MOSFET Datasheet
Images are for illustration only; actual product may vary.