×
IRFP350 High Voltage MOSFET
New generation MOSFET with advanced charge balance mechanism for exceptional performance.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 16A
- Drain-Source Resistance (Rds On): 300mOhms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 150 nC
- Operating Temperature Range: -55 to 150°C
- Power Dissipation (Pd): 190W
Features:
- Avalanche Rugged Technology
- Lower Input Capacitance
- Extended Safe Operating Area
- Lower Leakage Current: 10µA (Max.) @ VDS = 400V
The IRFP350 is designed for various AC/DC power conversion applications in switching mode operation, offering minimized conduction loss and superior switching performance. Withstand extreme dv/dt rate and higher avalanche energy for system miniaturization and higher efficiency.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.