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IRFP264N
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 44A
- Drain-Source Resistance (Rds On): 0.06Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 380W
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRFP264N is a new generation of high voltage MOSFET that uses an advanced charge balance mechanism to achieve outstanding low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, offer superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. This MOSFET is ideal for various AC/DC power conversion applications in switching mode operation for system miniaturization and higher efficiency.
**Images are for illustration only; actual product may vary.**