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IRFP254N
A new generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 23A
- Drain-Source Resistance (Rds On): 125mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 100 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 220W
Top Features:
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
The IRFP254N is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism to achieve outstanding low on-resistance and lower gate charge performance. This advanced technology minimizes conduction loss, provides superior switching performance, and withstands extreme dv/dt rate and higher avalanche energy.
It is highly suitable for various AC/DC power conversion applications in switching mode operation for system miniaturization and higher efficiency. With ease of paralleling and simple drive requirements, this MOSFET offers reliable performance in demanding environments.
Related Documents: IRFP254N MOSFET Datasheet
Images are for illustration only; actual product may vary.