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IRFP250N
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 30A
- Drain-Source Resistance (Rds On): 0.075Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 123 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 214W
Top Features:
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
IRFP250N is the new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and withstands extreme dv/dt rate and higher avalanche energy. It is suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or +91-8095406416.
*Images are for illustration only; actual product may vary.