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IRFP22N60K
New generation high voltage MOSFET with charge balance mechanism
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 22A
- Drain-Source Resistance (Rds On): 0.28Ohms
- Gate-Source Voltage (Vgs): 30V
- Gate Charge (Qg): 150 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 370W
Features:
- Low gate charge Qg simplifies drive requirement
- Improved gate, avalanche, and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche voltage/current
- Enhanced body diode dV/dt capability
IRFP22N60K is part of a new generation of high voltage MOSFETs that utilize an advanced charge balance mechanism for exceptional low on-resistance and reduced gate charge performance. Its innovative technology aims to minimize conduction loss, offer superior switching performance, and endure extreme dv/dt rate and higher avalanche energy, making it ideal for various AC/DC power conversion applications in switching mode operations for system miniaturization and increased efficiency.
For more details or bulk pricing options, please reach out to our sales team directly at sales02@thansiv.com or contact us at +91-8095406416.
*Images are for illustration only; actual product may vary.