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IRFP044N
New Generation High Voltage MOSFET
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 53A
- Drain-Source Resistance (Rds On): 0.020Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 61 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 120W
Features:
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
IRFP044N is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. It is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
Related Documents: IRFP044N MOSFET Datasheet
* Images are for illustration only; actual product may vary.