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IRFI644 High Voltage MOSFET
New generation high voltage MOSFET with innovative charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 250V
- Continuous Drain Current (Id): 7.9A
- Drain-Source Resistance (Rds On): 0.28Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 68 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 40W
Top Features:
- Isolated package
- High voltage isolation
- Sink to lead creepage distance = 4.8 mm
- Dynamic dV/dt rating
The IRFI644 is a new generation high voltage MOSFET designed for various AC/DC power conversion applications, providing outstanding low on-resistance and lower gate charge performance. Its tailored technology minimizes conduction loss, ensures superior switching performance, and withstands extreme dv/dt rate and higher avalanche energy, making it suitable for system miniaturization and higher efficiency.
For more details, refer to the IRFI644 MOSFET Datasheet.
Images are for illustration only; actual product may vary.