IRFBG30 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 1000V
- Continuous Drain Current (Id): 3.1A
- Drain-Source Resistance (Rds On): 5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 80 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 125W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRFBG30 is the new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism, providing outstanding low on-resistance and lower gate charge performance. The technology minimizes conduction loss, offers superior switching performance, and can withstand extreme dv/dt rate and higher avalanche energy. This MOSFET is ideal for various AC/DC power conversion applications in switching mode operation, enabling system miniaturization and higher efficiency.
This MOSFET is compliant with the RoHS Directive 2002/95/EC, ensuring environmentally friendly manufacturing processes.
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