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IRFBF20 MOSFET - 900V 1.7A N-Channel Power MOSFET TO-220 Package
Third-generation power MOSFET with fast switching and low on-resistance.
- Drain-source breakdown voltage: 900V
- Temperature coefficient: 1.1V/°C
- Gate-source threshold voltage min: 2.0V
- Gate-source threshold voltage max: 4.0V
- Gate-source leakage max: +100nA
- Drain-source on-state resistance max: 8.0?
- Forward transconductance min: 0.60S
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
TO-220AB package is universally preferred for commercial-industrial applications up to 50W power dissipation. It offers low thermal resistance and cost-effectiveness, making it widely accepted in the industry.
Package includes: 1 X IRFBF20 MOSFET - 900V 1.7A N-Channel Power MOSFET TO-220 Package
Images are for illustration only; actual product may vary.