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IRFBE30 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 800V
- Continuous Drain Current (Id): 4.1A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 78 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 125W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
The IRFBE30 MOSFET is designed for various AC/DC power conversion applications, offering outstanding low on-resistance and lower gate charge performance. It provides superior switching performance and can withstand extreme dv/dt rate and higher avalanche energy. This makes it suitable for system miniaturization and higher efficiency.
Compliant to RoHS Directive 2002/95/EC, the IRFBE30 MOSFET ensures ease of paralleling and simple drive requirements, making it ideal for switching mode operations.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.