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IRFBC40 High Voltage MOSFET
Advanced high voltage MOSFET with outstanding performance
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 600V
- Continuous Drain Current (Id): 6.2A
- Drain-Source Resistance (Rds On): 1.2 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 60 nC
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 125W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
The IRFBC40 is a new generation of high voltage MOSFET utilizing an advanced charge balance mechanism for exceptional low on-resistance and lower gate charge performance. Tailored to minimize conduction loss and provide superior switching performance, it is suitable for various AC/DC power conversions in switching mode operations to achieve system miniaturization and higher efficiency.
With simple drive requirements and compliance to RoHS Directive 2002/95/EC, this MOSFET offers reliability and efficiency in power applications.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.