×
IRFB4110 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 180A
- Drain-Source Resistance (Rds On): 4.5Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 210 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 370W
Top Features:
- High efficiency synchronous rectification
- Uninterruptible power supply support
- High speed power switching capability
- Usage in hard switched and high-frequency circuits
The IRFB4110 MOSFET is designed for various AC/DC power conversion applications in switching mode operation to enhance system miniaturization and improve efficiency. It offers outstanding low on-resistance and lower gate charge performance due to its advanced charge balance mechanism.
Utilizing advanced technology, the IRFB4110 minimizes conduction loss, provides superior switching performance, and can withstand extreme dv/dt rate and higher avalanche energy. This MOSFET is a reliable choice for demanding applications requiring high performance and efficiency.
For more details or bulk pricing inquiries, please contact our sales team at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.