IRF9Z34 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -60V
- Continuous Drain Current (Id): -18A
- Drain-Source Resistance (Rds On): 0.14Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 34 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 88W
Features:
- Dynamic dV/dt rating
- 100% avalanche rated
- Fast switching
- Ease of paralleling
The IRF9Z34 MOSFET is part of a new generation of high voltage MOSFETs utilizing an advanced charge balance mechanism for exceptional low on-resistance and lower gate charge performance. It is designed to minimize conduction loss, offer superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. This MOSFET is particularly suitable for various AC/DC power conversion applications in switching mode operation, enabling system miniaturization and higher efficiency.
With its P-Channel design and advanced process technology, this MOSFET offers simple drive requirements and delivers reliable performance.
For more detailed information, refer to the IRF9Z34 MOSFET datasheet.
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