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IRF9540N
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): -23A
- Drain-Source Resistance (Rds On): 0.117Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 97 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 140W
Top Features:
- Dynamic dV/dt rating
- 100% avalanche rated
- Fast switching
- Ease of paralleling
IRF9540N is a new generation of high voltage MOSFET family that utilizes an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This technology minimizes conduction loss, provides superior switching performance, and withstands extreme dv/dt rate and higher avalanche energy. It is suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.
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Images are for illustration only; actual product may vary.