Supertex Vertical DMOS Power FETs
Enhancement-mode power transistors with high power handling capabilities and fast switching speeds.
- Drain to Source Break Down Voltage: -60V
- Gate threshold voltage Min: -2.0V
- Gate threshold voltage Max: -4.0V
- ON-State drain Current Min: -5.0A
- Package Includes: 1 X IRF9523 MOSFET - 60V 5A P-Channel Power MOSFET TO-220 Package
Top Features:
- High break down voltage
- Low input capacitance
- Fast switching speeds
- Integral Source-Drain diode
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicon gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input Impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex Vertical DMOS Power FETs are ideally suited to a wide range of switching and amplifying applications where high break down voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Applications include motor control, converters, amplifiers, switches, power supply circuits, and drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.).
Features of these power transistors include freedom from secondary breakdown, low power drive requirement, ease of paralleling, low Ciss and fast switching speeds, excellent thermal stability, integral Source-Drain diode, high input impedance, high gain, and complementary N- and P-Channel devices.
* Images are for illustration only; actual product may vary.