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IRF9520 High Voltage MOSFET
A new generation MOSFET with advanced charge balance mechanism for exceptional performance.
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -100V
- Continuous Drain Current (Id): -6.8A
- Drain-Source Resistance (Rds On): 0.48Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 18 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 48W
Top Features
- Dynamic dV/dt rating
- 100% avalanche rated
- Fast switching
- Ease of paralleling
The IRF9520 is designed with an advanced charge balance mechanism to achieve outstanding low on-resistance and lower gate charge performance. It is ideal for various AC/DC power conversion applications in switching mode operations for enhanced system miniaturization and efficiency.
This MOSFET is compliant with the RoHS directive 2002/95/EC, ensuring environmental sustainability in its production and disposal.
For more information, refer to the IRF9520 MOSFET Datasheet.
* Images are for illustration only; actual product may vary.