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P-Channel Enhancement Mode Silicon Gate Power Field Effect Transistors
Advanced power MOSFETs designed for high power applications
- Drain to Source Breakdown Voltage: -80V
- Gate to Threshold Voltage Minimum: -2.0V
- Gate to Threshold Voltage Maximum: -4.0V
- Gate to Source Leakage Current Maximum: +100nA
- On-State Drain Current Minimum: -2.5V
- Package Includes: 1 X IRF9513 MOSFET - 80V 2.5A P-Channel Power MOSFET TO-220 Package
Top Features:
- Enhancement mode silicon gate
- Designed for switching regulators
- Tested for high power applications
- Low gate drive power
These P-Channel enhancement mode silicon gate power field effect transistors are guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. They are ideal for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. Additionally, these types can be operated directly from integrated circuits.
* Images are for illustration only; actual product may vary.