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IRF820 High Voltage MOSFET
New generation high voltage MOSFET with advanced charge balance mechanism.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 2.5A
- Drain-Source Resistance (Rds On): 3Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 17 nC
- Operating Temperature Range: -65 - 150°C
- Power Dissipation (Pd): 50W
Key Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
The IRF820 is designed for various AC/DC power conversion applications in switching mode operation, enabling system miniaturization and higher efficiency. It offers outstanding low on-resistance and lower gate charge performance, resulting in minimized conduction loss and superior switching performance, making it suitable for applications requiring extreme dv/dt rate and higher avalanche energy.
It comes with simple drive requirements and is compliant with RoHS directive 2002/95/EC for environmental safety.
Looking for more details or interested in bulk pricing? Reach out to our sales team directly - sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.