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IRF740 N-Channel Enhancement Mode Power Field Effect Transistor
Type of N-Channel enhancement mode power field effect transistor with low on-state resistance.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 10A
- Drain-Source Resistance (Rds On): 0.54Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 53 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 134W
Top Features
- Low gate charge
- Low Crss (typical 35 pF)
- Fast switching
- 100% avalanche tested
This N-Channel enhancement mode power field effect transistor, IRF740, utilizes planar DMOS technology designed to reduce on-state resistance and provide exceptional switching performance. It is capable of withstanding high energy pulses in avalanche and commutation modes, making it ideal for high efficiency switch mode power supplies and electronic lamp ballasts based on half-bridge configurations.
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Images are for illustration only; actual product may vary.