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IRF730 Power MOSFETs
Fast-switching, rugged design, low on-resistance, and cost-effective
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 400V
- Continuous Drain Current (Id): 5.5A
- Drain-Source Resistance (Rds On): 1 Ohm
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 38 nC
- Operating Temperature Range: -55°C to 150°C
- Power Dissipation (Pd): 74W
Top Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
IRF730 third generation power MOSFETs offer a combination of fast switching, rugged design, low on-resistance, and cost-effectiveness, making them ideal for commercial-industrial applications. The TO-220AB package ensures reliability at power levels up to 74W. These MOSFETs are compliant with the RoHS directive 2002/95/EC.
For more information, refer to the IRF730 MOSFET Datasheet.
*Images are for illustration only; actual product may vary.