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IRF630 Third Generation Power MOSFETs
Best combination of performance, rugged design, and cost-effectiveness.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 200V
- Continuous Drain Current (Id): 9A
- Drain-Source Resistance (Rds On): 0.4 Ohms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 43 nC
- Operating Temperature Range: -55°C - 150°C
- Power Dissipation (Pd): 74W
Features:
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
The IRF630 MOSFETs in TO-220AB package offer fast switching and low on-resistance, ideal for commercial-industrial applications up to 50W power dissipation levels. They are compliant with RoHS directive 2002/95/EC.
For more information, refer to the IRF630 MOSFET Datasheet.
Images are for illustration only; actual product may vary.