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IRF540 Power MOSFET
Fast switching, rugged design, low on-resistance, and cost-effective
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 33A
- Drain-Source Resistance (Rds On): 44mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 71 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 130W
Top Features
- Dynamic dV/dt rating
- Repetitive avalanche rated
- Fast switching
- Ease of paralleling
The IRF540 third generation power MOSFETs offer the best combination of fast switching, ruggedized design, low on-resistance, and cost-effectiveness. The TO-220AB package is ideal for commercial-industrial applications with power dissipation levels up to approximately 50W.
Compliant to RoHS directive 2002/95/EC, these MOSFETs have simple drive requirements, making them easy to use in various applications.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.