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IRF5305 HEXFET Power MOSFET
Advanced HEXFET Power MOSFET with low on-resistance and fast switching speed
- Number of Channels: 1 Channel
- Transistor Polarity: P-Channel
- Drain-Source Breakdown Voltage (Vds): -55V
- Continuous Drain Current (Id): -31A
- Drain-Source Resistance (Rds On): 60mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 63 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 110W
Features:
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
IRF5305 fifth generation HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications
Related Documents: IRF5305 MOSFET Datasheet
Images are for illustration only; actual product may vary.