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IRF3710 Power MOSFET
An efficient and reliable power MOSFET for various applications
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 57A
- Drain-Source Resistance (Rds On): 23mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 200W
Features:
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
Advanced HEXFET® Power MOSFETs like the IRF3710 utilize sophisticated techniques to achieve remarkably low on-resistance per unit area of silicon. Paired with their fast switching speed and rugged design, these power MOSFETs offer high efficiency and reliability for a wide range of applications.
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*Images are for illustration only; actual product may vary.