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IRF3415 HEXFET® Power MOSFET
Fifth-generation power MOSFET with low on-resistance per silicon area
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 150V
- Continuous Drain Current (Id): 43A
- Drain-Source Resistance (Rds On): 42mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 200 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 200W
Features:
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Fully avalanche rated
IRF3415 is a fifth generation HEXFET® Power MOSFET utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
For more details or bulk pricing, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.