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IRF3205
Advanced HEXFET® Power MOSFET with low on-resistance and fast switching speed.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 55V
- Continuous Drain Current (Id): 110A
- Drain-Source Resistance (Rds On): 8mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 146 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 200W
Features:
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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*Images are for illustration only; actual product may vary.