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IRF2807 HEXFET® Power MOSFET
Advanced HEXFET® Power MOSFET with low on-resistance and fast switching speed.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 75V
- Continuous Drain Current (Id): 82A
- Drain-Source Resistance (Rds On): 13mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 160 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 230W
Features:
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
IRF2807 is an Advanced HEXFET® Power MOSFET designed with advanced processing techniques to achieve extremely low on-resistance per silicon area. This, combined with fast switching speed and ruggedized device design, makes the HEXFET power MOSFET an efficient and reliable device suitable for a wide range of applications.
For more details or bulk pricing, reach out to our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.