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IRF244 MOSFET - 250V 15A N-Channel Power MOSFET TO-247 Package
Third generation Power MOSFETs from Vishay offering fast switching and low on-resistance.
- Drain-Source Breakdown Voltage: 250V
- Temperature Coefficient: 0.37V/°C
- Gate-Source Threshold Voltage (min): 2.0V
- Gate-Source Threshold Voltage (max): 4.0V
- Gate-Source Leakage (max): +100nA
- Drain-Source On-State Resistance: 0.28?
- Forward Transconductance (min): 6.7S
- Package Includes: 1 X IRF244 MOSFET - 250V 15A N-Channel Power MOSFET TO-247 Package
Features:
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
Need more details or interested in bulk pricing? Reach out to our sales team directly - sales02@thansiv.com +91-8095406416
Images are for illustration only; actual product may vary.