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IRF1010 Advanced HEXFET® Power MOSFET
An efficient and reliable power MOSFET for various applications.
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 60V
- Continuous Drain Current (Id): 84A
- Drain-Source Resistance (Rds On): 12mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 130 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 200W
Top Features:
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
IRF1010 Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Related Documents: IRF1010 MOSFET Datasheet
*Images are for illustration only; actual product may vary.