IR2104 High Voltage High Speed Power MOSFET Driver
A ruggedized monolithic driver for power MOSFETs and IGBTs with high-speed operation.
- VB-High side floating absolute voltage: -0.3 to 625 V
- VS-High side floating supply offset voltage: -25 to VB + 0.3 V
- VHO-High side floating output voltage: VS - 0.3 to VB + 0.3 V
- VCC-Low side and logic fixed supply voltage: -0.3 to 25 V
- VLO-Low side output voltage: -0.3 to VCC + 0.3 V
- VIN-Logic input voltage: (IN & SD) -0.3 to VCC + 0.3 V
Top Features:
- Floating channel for bootstrap operation
- Operational up to +600V
- Undervoltage lockout at 10-20V gate drive supply
- 3.3V, 5V, and 15V logic compatibility
The IR2104 is a high voltage, high-speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. It features a floating channel designed for bootstrap operation and is fully operational up to +600V. The IC is tolerant to negative transient voltage and has dV/dt immunity. With gate drive supply ranging from 10 to 20V, it includes undervoltage lockout and cross-conduction prevention logic.
The logic input of the IR2104 is compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers have a high pulse current buffer stage for minimal driver cross-conduction. The floating channel can be utilized to drive an N-channel power MOSFET or IGBT in the high-side configuration, working from 10 to 600 volts. The high-side output is in phase with the input, and the shutdown input turns off both channels simultaneously. Both channels have matched propagation delays.
Additionally, the IR2104 has internally set dead time and is available in a lead-free version as well.
For more details or bulk pricing inquiries, contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.