IR2101 High Voltage, High Speed Power MOSFET and IGBT Driver
High voltage, high speed driver with independent output channels and ruggedized construction.
- VB-High side floating supply voltage: -0.3 to 625 V
- VS-High side floating supply offset voltage: -25 to +0.3 V
- VHO-High side floating output voltage: -0.3 to +0.3 V
- VCC-Low side and logic fixed supply voltage: -0.3 to 25 V
- VLO-Low side output voltage: -0.3 to VCC+0.3 V
- VIN-Logic input voltage (HIN & LIN): -0.3 to VCC+0.3 V
- Lead-Free: Yes
Top Features:
- Floating channel for bootstrap operation
- Operational up to +600V
- Tolerant to negative transient voltage
- Gate drive supply range: 10 to 20V
The IR2101 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It features proprietary HVIC and latch immune CMOS technologies for ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers include a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can drive an N-channel power MOSFET or IGBT in the high side configuration, operating up to 600 volts.
The IR2101 is also equipped with undervoltage lockout and is compatible with 3.3V, 5V, and 15V logic inputs. It has matched propagation delay for both channels and offers outputs in phase with inputs (IR2101) or out of phase with inputs (IR2102).
For more details or bulk pricing inquiries, please contact our sales team directly at sales02@thansiv.com or call +91-8095406416.
*Images are for illustration only; actual product may vary.