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IGP15N60T Low Loss IGBT
A power semiconductor designed for frequency converters and UPS systems
- Spec name: IGBT in TRENCH STOP™ and Field stop technology
- Spec name: Maximum Junction Temperature 175°C
- Spec name: Short circuit withstand time 5µs
- Spec name: Positive temperature coefficient in VCE(sat)
- Spec name: Low EMI
- Spec name: Pb-free lead plating; RoHS compliant
- Spec name: Qualified according to JEDEC1 for target applications
Features:
- Very low VCE (sat) 1.5V (typ.)
- Maximum Junction Temperature 175°C
- Short circuit withstand time 5µs
The IGP15N60T is a high-performance IGBT in TRENCH STOP™ and Field stop technology, ideal for applications requiring high ruggedness and very high switching speeds. With a very low VCE (sat) of 1.5V and Pb-free lead plating, it ensures efficient and environmentally friendly operation.
Specification:
- Collector-emitter voltage, Tj @ 25°C: 600 V
- DC collector current @ 25°C: 26 A
- DC collector current @ 100°C: 23 A
- Pulsed collector current: 45 A
- Gate-emitter voltage: ±20 V
- Short circuit withstand time: 5 µs
- Power dissipation @ 25°C: 130 W
- Operating junction temperature: -40...+175 °C
For more details or interested in bulk pricing, reach out to our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.