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G160N60 Insulated Gate Bipolar Transistor (IGBT)
Low conduction and switching losses for motor control and inverters.
- VCES: 600 V
- VGES: ±20 V
- IC: 160 A @ 25°C, 80 A @ 100°C
- ICM: 300 A
- IF: 25 A Continuous, 280 A Maximum
- PD: 250 W @ 25°C, 100 W @ 100°C
- TJ: -55 to +150 °C Operating Junction Temperature
- Tstg: -55 to +150 °C Storage Temperature Range
- TL: 300 °C Maximum Lead Temp. for Soldering
Features:
- High speed switching
- Low saturation voltage: VCE(sat) = 2.1 V @ IC = 80A
- High input impedance
- CO-PAK, IGBT with FRD: trr = 75nS (typ.)
Applications include AC & DC motor controls, general purpose inverters, robotics, servo controls, and power supplies.
Related Document: G160N60 IGBT Data Sheet
Images are for illustration only; actual product may vary.