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G15N60 Fast IGBT in NPT-Technology
A high-performance IGBT with low Eoff and conduction losses
- Collector-emitter voltage: 600V
- DC collector current: 15A
- Operating junction temperature: 150°C
- Short circuit withstand time: 10 µs
- Gate-emitter voltage: ±20V
- Power dissipation: 139W
- Soldering temperature: 260°C
- Storage temperature: -55°C
- Packaging: N/A
Features:
- Low Eoff, reduced conduction losses
- Short circuit withstand time of 10 µs
- High ruggedness, temperature stable behavior
- Qualified according to JEDEC standards
The G15N60 is a fast IGBT in NPT-technology, offering 75% lower Eoff compared to the previous generation along with low conduction losses. It is specifically designed for motor controls and inverter applications.
With NPT-Technology for 600V applications, it provides very tight parameter distribution, high ruggedness, temperature stable behavior, and parallel switching capability. The IGBT is qualified according to JEDEC standards for target applications and features Pb-free lead plating, making it RoHS compliant.
For more details or bulk pricing, please reach out to our sales team directly at sales02@thansiv.com or call +91-8095406416.
Images are for illustration only; actual product may vary.