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FDP090N10 N-Channel MOSFET
Advanced PowerTrench® MOSFET with optimized performance
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 100V
- Continuous Drain Current (Id): 75A
- Drain-Source Resistance (Rds On): 9mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 116 nC
- Operating Temperature Range: -55 - 175°C
- Power Dissipation (Pd): 208W
Key Features:
- Low offset voltage
- Full-voltage operation
- Fast switching speed
- Low error voltage
The FDP090N10 N-Channel MOSFET is produced using the advanced PowerTrench® process, tailored to minimize on-state resistance and ensure superior switching performance. Its technology minimizes conduction loss, provides excellent switching performance, and can withstand extreme dv/dt rate and higher avalanche energy. Ideal for AC/DC power conversion in switching mode operations to achieve system miniaturization and higher efficiency.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.