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P-Channel Logic Level MOSFET
Advanced Power Trench MOSFET for low voltage applications
- Drain-Source Voltage: -30V
- Gate-Source Voltage: ±20V
- Drain Current – Continuous: -2A
- Drain Current – Pulsed: -20A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
- Package Includes: 1 x FDN360P MOSFET - (SMD SOT-23 Package) - 30V 2A P-Channel Logic Level MOSFET
Features:
- 2A, -30V
- RDS(ON) = 0.080? @ VGS = -10V, RDS(ON) = 0.125? @ VGS = -4.5V
- Low gate charge (5nC typical)
- Fast switching speed
This P-Channel Logic Level MOSFET is produced using advanced Power Trench process tailored to minimize on-state resistance while maintaining superior switching performance. Ideal for low voltage and battery-powered applications requiring low power loss and fast switching.
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Images are for illustration only; actual product may vary.