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FDN357P MOSFET - (SMD SOT-23 Package) - 30V 1.9A P-Channel Logic Level Enhancement Mode MOSFET
High-density power field effect transistors for low voltage applications.
- Drain-Source Voltage: -30V
- Gate-Source Voltage: ±20V
- Drain Current – Continuous: -1.9A
- Drain Current – Pulsed: -10A
- Maximum Power Dissipation: 0.5-0.46W
- Operating and Storage Junction Temperature Range: -55 to +150°C
- Package Includes: 1 x FDN357P MOSFET - (SMD SOT-23 Package) - 30V 1.9A P-Channel Logic Level Enhancement Mode MOSFET
Features:
- 1.9 A, -30 V RDS(ON) = 0.090? @ VGS = -4.5V RDS(ON) = 0.060? @ VGS = -10V
- Industry standard outline SOT-23 surface mount package
- Proprietary Super SOT-23 design for superior thermal and electrical capabilities
- High-density cell design for extremely low RDS(ON)
Super SOT-23 P-Channel logic level enhancement mode power field effect transistors are produced using high cell density. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
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Images are for illustration only; actual product may vary.