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FDA50N50 MOSFET
High voltage MOSFET for power converter applications
- Number of Channels: 1 Channel
- Transistor Polarity: N-Channel
- Drain-Source Breakdown Voltage (Vds): 500V
- Continuous Drain Current (Id): 48A
- Drain-Source Resistance (Rds On): 105mOhms
- Gate-Source Voltage (Vgs): 20V
- Gate Charge (Qg): 137 nC
- Operating Temperature Range: -55 - 150°C
- Power Dissipation (Pd): 625W
Top Features:
- Low offset voltage
- Full-voltage operation
- Easily driven without buffer
- Low error voltage
FDA50N50 MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. It is designed to reduce on-state resistance, improve switching performance, and provide higher avalanche energy strength. Ideal for power converter applications like power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
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Images are for illustration only; actual product may vary.