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CT60AM-18F Insulated Gate Bipolar Transistor
A simple drive IGBT with VCES of 900V, IC of 60A, and integrated fast-recovery diode
- Collector-Emitter Voltage: 900 V
- Gate-Emitter Voltage: ±25 V
- Peak Gate-Emitter Voltage: ±30 V
- Collector Current: 60 A
- Collector Current (Pulse): 120 A
- Emitter Current: 40 A
- Maximum Power Dissipation: 180 W
- Junction Temperature: –40 ~ +150 °C
- Storage Temperature: –40 ~ +150 °C
Top Features:
- Low VCE Saturation Voltage
- Small tail loss
Applications:
- Microwave oven
- Electromagnetic cooking devices
- Rice-cookers
- Voltage-resonant inverter circuit electric appliances
Related Document: CT60AM-18F IGBT Data Sheet
*Images are for illustration only; actual product may vary.