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CNY74-4 Photo Transistor Optocoupler
With 4 Isolator Channels and GaAs Infrared-Emitting Diode
- Reverse voltage: 6 V
- Forward current: 60 mA
- Surge current: 1.5 A
- Power dissipation: 100 mW
- Collector-emitter breakdown voltage: 70 V
- Emitter-base breakdown voltage: 7 V
- Collector current: 100 mA
- Junction temperature: 125 °C
Top Features:
- 4 isolator channels
- DC isolation test voltage VIO = 2.5 kV
- Low coupling capacitance of 0.3 pF
- Current Transfer Ratio (CTR) of 100%
The CNY74-4 consists of a photo transistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead or 16-lead plastic dual inline package. The elements are mounted using a coplanar technique, ensuring a fixed distance between input and output for maximum safety.
It is suitable for galvanically separated circuits and non-interacting switches, meeting Test class 25/100/21 DIN 40 045 standards. The device also exhibits a low temperature coefficient of CTR and functions within a wide ambient temperature range.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.