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CNY65 Optocoupler Phototransistor Output
Highly isolated optocoupler with phototransistor output
- Package / Case: DIP-4
- Length: 17.8 mm
- Width: 9.6 mm
- Height: 6.1 mm
- Collector-Emitter Breakdown Voltage: 32 V
- Configuration: 1 Channel
- Current Transfer Ratio: 100% to 200%
- Description/Function: Optocoupler, Phototransistor Output, Very High Isolation Voltage
Top Features:
- Isolation Voltage: 8200 Vrms
- Maximum Collector Current: 50 mA
- Maximum Collector Emitter Saturation Voltage: 0.3 V
- Rise Time: 2.4 us
The CNY65 optocoupler consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-pin plastic package. The components are strategically mounted opposite one another to provide a distance of over 3 mm between input and output, meeting high safety requirements.
Specifications:
- Rated recurring peak voltage (repetitive) VIORM: 1450 Vpeak
- Thickness through insulation: 3 mm
- Creepage current resistance (CTI 200): According to VDE 0303/IEC 60112
- Compliance: RoHS Directive 2002/95/EC, WEEE 2002/96/EC
With a Fall Time of 2.7 us and a maximum operating temperature of +85°C, the CNY65 is a reliable choice for applications requiring a phototransistor output optocoupler.
* Images are for illustration only; actual product may vary.