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NAND Gate
Monolithic Complementary MOS Integrated Circuits with High Noise Immunity
- Voltage at Any Pin: VSS -0.3V to VDD +0.3V
- Operating Temperature Range: -40°C to +85°C
- Storage Temperature Range (TS): -65°C to +150°C
- Power Dissipation (PD): Dual-In-Line 700 mW
- Operating Range (VDD): VSS +3.0V to VSS +15V
- Lead Temperature (TL): 260°C (Refer Data Sheet for detailed specifications)
Features:
- Two Independent 4-input NAND Gates
- Standard Pin Configuration
- Wide Operating Voltage Range
- Operating Temperature up to 85°C
The NAND gate is a monolithic complementary MOS (CMOS) integrated circuit with N- and P-channel enhancement mode transistors providing a symmetrical circuit. It offers output swings essentially equal to the supply voltage, resulting in high noise immunity across a wide supply voltage range. During static conditions, no DC power other than that caused by leakage current is consumed. All inputs are protected against static discharge and latching conditions.
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Images are for illustration only; actual product may vary.