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BUZ90 NPN/PNP Transistor
A versatile three-layer device with high ruggedness and simple drive requirements.
- Transistor Polarity: N-Channel
- Drain/Source Voltage (VDS): 600V
- Drain Current (Id): 4.5A
- Drain/Source Resistance (RDS): 1.6 ohm
- Power Dissipation (Pd): 500mW
- Operating Temperature Range: -65°C to 200°C
- Output Capacitance (Cobo): 4pF
- Input Capacitance (Cibo): 5pF
- Storage Time (ts): 13 ns
Features:
- High ruggedness
- Simple drive requirements
- High safe operating area
- For low distortion complementary designs
BUZ90 is a three-layer NPN or PNP device within the working range. The collector current IC is a function of the base current IB, with a change in the base current giving a corresponding amplified change in the collector current for a given collector-emitter voltage VCE. It is easy to carry and handle.
For more details or bulk pricing, contact our sales team at sales02@thansiv.com or +91-8095406416.
Images are for illustration only; actual product may vary.